SiC devices have excellent characteristics that realize high blocking voltage, low power dissipation, high-frequency operation and high-temperature operation. Power semiconductors that make use of SiC achieve significant reduction in energy consumption, and can be used to develop smaller and lighter products.
SiC-SBD Equipped IGBT Hybrid Module V Series
Utilize high performance chip
Package compatibility with conventional Si-IGBT module products
SiC Schottky-Barrier Diodes (SBD)
High speed switching
High reverse surge withstand capability