SiC Devices
SiC devices have excellent characteristics that realize high blocking voltage, low loss, high-frequency operation and high-temperature operation. Power semiconductors that use SiC achieve a significant reduction in energy consumption, and can be used to develop smaller and lighter products.
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Features
SiC-SBD Equipped IGBT Hybrid Module V Series
Hybrid SiC Modules - New product information
High performance chip application
- Low loss V Series IGBT
- Low loss SiC-SBD
Package compatibility with conventional Si-IGBT module products
SiC Schottky-Barrier Diodes
High speed switching characteristics
- High frequency operation of power supplies, and miniaturization and weight reductions for systems
Low-VF characteristics
Low-IR characteristics
- Tj=175°C guaranteed, high temperature operation of power supplies, low loss, high efficiency
High reverse surge withstand capability
