SiC Devices
SiC devices have excellent characteristics that realize high blocking voltage, low loss, high-frequency operation and high-temperature operation. Power semiconductors that use SiC achieve a significant reduction in energy consumption, and can be used to develop smaller and lighter products.
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Features
IGBT Hybrid Modules with SiC-SBD X series / V series
Hybrid SiC Modules - New product information
- High performance chips
ーX series / V series IGBT for low loss operation
ーSiC-SBD for low loss operation - The same package lineup as the conventional Si-IGBT modules
All-SiC Modules
- The latest generation SiC trench gate MOSFETs for significantly low loss operation
- The compatible package lineup as the conventional Si-IGBT modules
- Lower inductance package
SiC Schottky-Barrier Diodes (SBD)
SiC-SBD 2G Series
- High speed switching
- Low-VF : VF is about 15% lower than the conventional products (vs. 1G 650V)
- Low-IR
- High surge current capability: IFSM improved by about 60% compared to conventional products(vs. 1G)
SiC-SBD 1G Series
- High speed switching
- Low-VF
- Low-IR
- High surge current capability
