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SiC Devices

SiC devices have excellent characteristics that realize high blocking voltage, low loss, high-frequency operation and high-temperature operation. Power semiconductors that use SiC achieve a significant reduction in energy consumption, and can be used to develop smaller and lighter products.
SiC Devices

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Features

SiC-SBD Equipped IGBT Hybrid Module V Series

Hybrid SiC Modules - New product information

High performance chip application

  • Low loss V Series IGBT
  • Low loss SiC-SBD

Package compatibility with conventional Si-IGBT module products

SiC Schottky-Barrier Diodes

High speed switching characteristics

  • High frequency operation of power supplies, and miniaturization and weight reductions for systems

Low-VF characteristics

Low-IR characteristics

  • Tj=175°C guaranteed, high temperature operation of power supplies, low loss, high efficiency

High reverse surge withstand capability

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