IGBTThe Fuji Electric IGBT modules have been developed to be used as switching elements for the power converters of variable-speed drives for motors, uninterruptable power supplies, and others. An IGBT is a semiconductor device that combines the high-speed switching performance of a power MOSFET with the high-voltage/high-current handling capabilities of a bipolar transistor.
Features of the IGBT Module X Series
In the 7th-generation X series, the IGBT and diode devices that constitute the modules have been made thinner and miniaturized to optimize the device structure. This has reduced the power loss during inverter operation compared with the conventional products (Fuji Electric's 6th-generation V Series). This contributes to energy saving and power cost reduction on the equipment on which the module is installed.
1. Low loss
The IGBT and diode devices that constitute these modules have been made thinner and miniaturized to optimize the device structure. This has reduced the power loss during inverter operation compared with the conventional products (Fuji Electric's 6th-generation V Series)
10% inverter loss reduction and 11°C chip temperature reduction (compared to 6th-generation V Series 75A, fc=8 kHz)
2. Size reduction
A newly developed insulating substrate has been applied in order to improve the module’s heat dissipation. This combined with the reduced power loss suppresses heat generation, which makes it possible to achieve a size reduction of approximately 36% from the conventional products.
3. High-temperature operation
The highly reliable and highly heat resistant package and the optimization of the chip have realized a continuous operating temperature of 175°C.
- Output can be increased by 35% from conventional products
- ΔTvj power cycle resistance is improved (to double that of previous products)
IGBT module X Series product lineup (including products under development) 650 V/1200 V/1700 V
PIM: Power Integrated Modules (product that integrates multiple circuits into a single module)
RC-IGBT: Reverse Conducting Insulated Gate Bipolar Transistor
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