Product Information
Power Modules
Product List
IGBT Modules
SiC Modules
Features of the IGBT Module X Series
In the 7th-generation X series, the IGBT and diode devices that constitute the modules have been made thinner and miniaturized to optimize the device structure. This has reduced the power loss during inverter operation compared with the conventional products (Fuji Electric's 6th-generation V Series). This contributes to energy saving and power cost reduction on the equipment on which the module is installed.
1. Low loss
The IGBT and diode devices that constitute these modules have been made thinner and miniaturized to optimize the device structure. This has reduced the power loss during inverter operation compared with the conventional products (Fuji Electric's 6th-generation V Series)
10% inverter loss reduction and 11°C chip temperature reduction (compared to 6th-generation V Series 75A, fc=8 kHz)
2. Size reduction
A newly developed insulating substrate has been applied in order to improve the module’s heat dissipation. This combined with the reduced power loss suppresses heat generation, which makes it possible to achieve a size reduction of approximately 36% from the conventional products.
3. High-temperature operation
The highly reliable and highly heat resistant package and the optimization of the chip have realized a continuous operating temperature of 175°C.
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Output can be increased by 35% from conventional products
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ΔTvj power cycle resistance is improved (to double that of previous products)
IGBT module X Series product lineup (including products under development) 650 V/1200 V/1700 V
PIM: Power Integrated Modules (product that integrates multiple circuits into a single module)
RC-IGBT: Reverse Conducting Insulated Gate Bipolar Transistor
EconoPIM™ and PrimePACK™ are registered trademarks of Infineon Technologies AG.
SiC Modules
IGBT Hybrid Modules with SiC-SBD X series / V series
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High performance chips
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X series / V series IGBT for low loss operation
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SiC-SBD for low loss operation
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The same package lineup as the conventional Si-IGBT modules
All-SiC Modules
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The latest generation SiC trench gate MOSFETs for significantly low loss operation
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The compatible package lineup as the conventional Si-IGBT modules
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Lower inductance package
