The Company has industry-leading low-loss chips that contribute to higher efficiency, smaller size, and higher reliability in power electronics products such as inverters, as well as packaging technologies that achieve high heat dissipation and high reliability. Through customer support utilizing our global production bases and sales and design centers, we hold a leading position in the IGBT module market, having the third highest share globally.

Leveraging these strengths in our power semiconductor business, we will steadily secure new design wins and develop new customers, primarily in the motor drive and renewable energy fields and for electrified vehicles, where medium- to long-term market growth is expected.

In the industrial field, we aim to grow sales faster than the market by expanding sales of new products. In the automotive field, we will drive sales growth from fiscal 2028 onward through new customer development and securing design wins.

We will continue to develop new products to address advanced technical needs such as equipment downsizing, lower system costs, and higher efficiency.

In the industrial field, we will mass-produce 8th-generation IGBT modules that reduce power loss by at least 15% compared to the 7th generation and increase rated current within the same package. We will also develop a new medium-capacity module differentiated by our proprietary packaging technology and that is optimized for the intermediate range between medium- and large-capacity applications, providing products ideally suited to customer equipment for renewable energy, data centers, and other markets that are expected to grow over the medium to long term.

In the automotive field, we will mass-produce high-power SiC modules that achieve a smaller size and a lower profile through our proprietary three-dimensional wiring technology while significantly reducing inductance* inside the module. We will also begin sample shipments of next-generation low-profile-package SiC modules that enable a broad product lineup of ratings within a single package. These new products will help customers reduce the size and cost of their equipment.

* Inductance: A higher value here increases switching loss and noise

In the chip manufacturing process (front-end), we will increase SiC production capacity in line with demand, prepare for mass production of 8th-generation IGBTs, and scale back small-diameter production lines. For SiC, following the Tsugaru Factory, we will begin 6-inch production at the Matsumoto Factory while moving forward with preparations for mass production of 8-inch devices. For Si, we will systematically scale back and close small-diameter lines of 6 inches or less and shift production to 8-inch lines, thereby improving productivity, promoting rationalization, and strengthening profitability.

In the assembly process (back-end), we will launch mass production of new products and expand production capacity to meet rising demand. At our bases in Japan, we will start production of 8th-generation IGBT modules for the industrial field and new SiC modules for the automotive field, and we will increase production capacity for large-capacity industrial modules and compact IGBT modules for electrified vehicles. At overseas bases in China, Malaysia, and elsewhere, we will increase production capacity for 7th-generation IGBT modules, for which global demand remains strong, by 20% to 30% year on year, thereby establishing a structure that can reliably meet increased demand in the industrial field.