Fuji Electric Review
Vol.69-No.4,2023
Power Semiconductors Contributing to Vehicle Electrification and Energy Management
Power Semiconductors Contributing to Vehicle Electrification and Energy Management
At a time when decarbonization efforts are accelerating worldwide as a means of contributing to carbon neutrality, Fuji Electric outlines in its Corporate Philosophy its desire to “contribute to prosperity,” “encourage creativity,” and “seek harmony with the environment,” and upholds as a pillar of its Management Policies its intention to contribute to the creation of a responsible and sustainable society through its energy and environment businesses. The electrification of automobiles and the enhancement of the efficiency of power electronics for the stable and efficient use of energy are effective approaches to decarbonization, and Fuji Electric’s power semiconductors serve as key devices that contribute to these initiatives. This special issue presents Fuji Electric’s last power semiconductor products and technologies.
De Doncker, Rik W
ONISHI, Yasuhiko; MIYASAKA, Tadashi; IKAWA, Osamu
Decarbonization efforts are accelerating worldwide as a means of contributing to carbon neutrality. Fuji Electric outlines in its Corporate Philosophy its desire to “contribute to prosperity,” “encourage creativity,” and “seek harmony with the environment,” and upholds as a pillar of its Management Policies its intention to contribute to the creation of a responsible and sustainable society through its energy and environment businesses. As part of efforts to achieve carbon neutrality, Fuji Electric aims to reduce greenhouse gas (GHG) emissions from production activities by more than 46% by fiscal 2030 compared to fiscal 2019 figures. The electrification of automobiles and the enhancement of the efficiency of power electronics for the stable and efficient use of energy are effective approaches to decarbonization, and Fuji Electric's power semiconductors serve as key devices that contribute to these trends. Specifically, we have developed insulated gate bipolar transistors (IGBTs) and metal-oxide semiconductor field-effect transistors (MOSFETs) with silicon carbide (SiC), which are key devices in power semiconductors, as well as packages for housing them, to provide the market with products that meet the demand for further efficiency improvement, size reduction, and reliability enhancement.
In this paper, we describe the current status and future outlook of power semiconductor products and technologies.
TAKASHIMA, Kensuke; YOSHIDA, Soichi; TATEISHI, Yoshihiro
The electrification of automobiles has recently accelerated worldwide. The world’s largest BEV market has developed especially in China and the demand for large vehicles is increasing in the Chinese market. Therefore, power modules with higher output and power density are required. Fuji Electric has developed the “M675” new IGBT module for motors with output capacities of 140kW class. By combining a low-loss RC-IGBT and high thermal performance cooler, it has reduced power loss by 13% and thermal resistance by 20% and has increased output current by 30%, while maintaining the same dimensions as the conventional “M653”. Consequently, it achieves a higher power density and increases the targeted motor output capacity to 140kW compared to the 100kW of the M653.
NAKAMURA, Yoko; WATAKABE, Tsubasa; ASAI, Tatsuhiko
Integrated mechanical and electrical systems for electrified vehicles are being widely developed. They include drive systems, such as inverters and motors, and power modules for the components are also in need of high power density and reliability. Fuji Electric’s 4th-generation automotive power module achieves high power density and high reliability by suppressing thermal deformation through the use of lead frame wiring and a resin molding structure. In order to ensure higher reliability, we have developed a lead frame roughening technology that improves resin adhesion. Compared to untreated roughening, this technology improves adhesion twofold or more and improves the module’s ΔTvj power cycle tolerance by a factor of 1.3.
HITACHI, Takahisa; KAWABATA, Junya; KODAIRA, Yoshihiro
Renewable energy has been highlighted as a means of reducing greenhouse gas emissions. For further promotion of its use, power conversion equipment capacity is increasing in order to reduce power generation costs and improve efficiency. Fuji Electric has accordingly developed the “HPnC” industrial large-capacity IGBT module, which can be easily connected in parallel and provides high output power. Products of a 1,700-V rating have increased approximately 33% available output current by using optimal internal structure compared to conventional ones. Products of a 2,300-V rating, which are developed for 1,500-V DC power conversion equipment, have increased the output power by approximately 18%.
FUJII, Masanari; JOZUKA, Naohiko; KARAMOTO, Yuki
Fuji Electric has developed the 7th-generation “X Series” IGBT-IPM, which uses our new “P638” package to meet the demand for further miniaturization and lower loss in power converters. Compared to the “P630” 6th-generation IGBT-IPM, this 7th-generation product has a 54% smaller module footprint. The 7th-generation chip technology has reduced the power dissipation by 10% and the 7th-generation package technology has increased the
operating temperature to 150°C, allowing the P638 to have the higher continuous load current than that of the P630 6th-generation IGBT-IPM by 28%.
KOBAYASHI, Yoshinori; YAMAJI, Masaharu; YAMAMOTO, Tsuyoshi
Efforts to achieve a decarbonized society has increased the demand for switching power supplies that deliver low standby power, high efficiency, and low costs through component reduction. Fuji Electric has developed a LLC current resonant control IC for switching power supplies with a built-in buck circuit. This IC allows power supply circuits to reduce seven parts. Although the built-in buck circuit rose concerns about heat generation from the IC, the use of a new level-shift devices for the high-side driver has enabled the IC to reduce power loss by approximately 40%, lowering IC surface temperature by approximately 6°C.
MATSUMOTO, Haruki; TAMURA, Takahiro; KARAMOTO, Yuki
Power semiconductors has been widely used in power conversion equipment in the renewable energy field, including solar and wind power generation. IGBT modules are required to deliver a high voltage rating and withstand voltage due to the recent increase in power generation output. To meet this demand, Fuji Electric has developed an“X Series” IGBT chip and FWD chip with a rated voltage of 2,300V. Use of optimal backside structure with a thinned drift layer allows both chips to have enough tolerance and withstand voltage. The IGBT has a 39% lower collectoremitter saturation voltage and the FWD has a 43% lower reverse recovery-loss than conventional 3,300-V chips.
KARINO, Taichi; MIYAZAWA, Yasuhiro; KAMADA, Seigo
High-power modules for power converters for the renewable energy field must suppress short-circuit oscillation and reduce switching loss at high temperatures to further improve reliability and efficiency. Therefore, the gate resistance value of IGBTs in high-power modules is required to be optimal and is prevented from rising even at high temperatures. In response to these needs, Fuji Electric has developed a built-in resistor chip for high-power modules that has a temperature coefficient of resistance of less than 0 ppm/°C by combining a polysilicon resistor and a low specific-resistance Si substrate. This technology has reduced turn-on loss at high temperatures by 13%.
TAWARA, Takeshi; TAKENAKA, Kensuke; NARITA, Shunki
Fuji Electric is conducting research on superjunction (SJ) structures to improve the performance of SiCMOSFETs. A SiC-SJ-MOSFET has a SJ structure that is fabricated using a multi-epitaxial process, in which epitaxial growth (n-column formation) and aluminum (Al) ion implantation (p-column formation) are repeated. Al ion implantation reduces a carrier lifetime of the drift layer and suppresses the increase in reverse recovery charge during reverse recovery, alleviating the bipolar degradation of the body diode compared to conventional SiC trench gate MOSFETs. SiC-SJ-MOSFETs are expected not only to reduce on-resistance but also reduce switching loss and improve reliability.
New Products
HIGUCHI, Fumiya; NIKAIDO, Tokihiro
Whereas conventional motion systems were designed to prioritize high speed to improve productivity, recent ones are additionally required to have the function to detect defective products in real time during operation to prevent the outflow of defective products. In response to this demand, Fuji Electric has developed the “ALPHA7” servo system diagnostic option, which uses artificial intelligence (AI) technology.
