||Power Semiconductors Contributing in Energy Management
Power Semiconductors Contributing in Energy Management
High-efficiency energy usage has become an extremely important factor in achieving a low-carbon society. In particular, electric energy has become indispensable in numerous fields such as automobile, industrial machinery, social infrastructure and consumer electronics, and as such, there is much expectation that advances in power electronics technology will enable the high-efficiency usage of electric energy. Fuji Electric has been developing easy-to-use power semiconductors that are characterized by their high energy conversion efficiency and low noise as key devices in the field of power electronics technology.
In this special issue, we will introduce the latest technologies and products of Fuji Electric's power semiconductors.
All-SiC Module Packaging Technology
NAKAMURA, Hideyo; NISHIZAWA, Tatsuo; NASHIDA, Norihiro
We applied the All-SiC (silicon carbide) module with new package structure to mega solar power conditioning
sub-system (PCS), achieving 98.8% energy conversion efficiency and resulting in energy conservation. Key technologies
are 3-dimensional wiring using Cu pins with power board instead of conventional Al wiring and full-mold structure
using the thermosetting epoxy resin. These technologies lead to small package size, low inductance, and high
reliability. We have optimized the package design to bring out the intrinsic performances of SiC device. Resin flow
analysis and its visualization methods are carried out to design molding process, resulting in the full mold structure
with free air void.
1,700-V Withstand Voltage SiC Hybrid Module
ONEZAWA, Takumi; KITAMURA, Shoji; ISO, Akira
Fuji Electric has developed a SiC hybrid module with a 1,700-V withstand voltage. It is designed for use in
the traction market as a power device that can be utilized in inverters that contribute to energy savings. This module
is equipped with 6th-generation IGBT chips and applies SiC-SBD chips to its FWDs. It has a product rating of
1,700 V/1,200 A (2 in 1) and has 2 specifications: standard specifications that make much of power dissipation, and
low VCE(sat) specifications suitable for low switching frequencies. The standard specifications reduce loss by 18%
compared with conventional Si modules. Furthermore, the low VCE(sat) specifications achieve 6% loss reduction compared
with the standard specifications at low switching frequency condition.
3,300-V Withstand Voltage SiC Hybrid Module Technology
KANEKO, Satoshi; KANAI, Naoyuki; TSUJI, Takashi
There has been increasing demand for electronics to achieve not only energy savings, but also be more compact,
lightweight and improved performance such as high output. Fuji Electric is seeking to meet these demands by
pursuing the development of a SiC hybrid module with a 3,300-V withstand voltage. By adopting the SiC-SBDs that
we developed in partnership with the joint research body Tsukuba Power-Electronics Constellation (TPEC), we have
been able to reduce generated loss by 24% compared with current Si modules. In addition, we have also utilized
Sn-Sb solder to ensure high reliability and have been able to improve continuous operation temperature by 25 °C.
Moreover, we made use of the reducing effect of generated loss to achieve improvements in power density while also
reducing the footprint size by approximately 30%.
7th-Generation “X Series” IGBT Module
KAWABATA, Junya; MOMOSE, Fumihiko; ONOZAWA, Yuichi
In recent years, the IGBT module market has been seeing increasing demand for compact modules with low loss
and high reliability. In order to meet these demands, we have developed the 7th-Generation “X Series” IGBT Module.
By significantly reducing the loss of IGBT and FWD chips and developing a package characterized by its high heat
dissipation, high heat resistance and high reliability, we have reduced the module’s footprint by approximately 36%
and power loss by approximately 10% and achieved long-term reliability. Furthermore, by enhancing its withstanding
and characteristics during high-temperature operation, we increased the maximum temperature for continuous operation
to 175 °C, from the conventional temperature of 150 °C. These enhancements have enabled the module to significantly increase output current, and this further increase the power density and miniaturizes the size of power converters.
2nd-Generation Small IPM
ARAKI, Ryu; SHIRAKAWA, Toru; KOGAWA, Hiroki
Fuji Electric has been developing small intelligent power modules (IPMs) that integrate into a single package the
power devices and control IC needed in the system construction of motor drives. We have now developed a 2nd-generation
small IPM based on 7th-generation IGBT technology to achieve even more energy savings. The module
reduces the loss by 10% or more in the intermediate load region, such as in the case of a 5.6-kW air conditioner,
and by 20% or more in the rated and maximum load region compared with the 1st-generation module. In addition,
temperature rise in the soldering on the circuit board has also been reduced by approximately 20 °C compared with
the 1st-generation module. Overall, the module achieves enhanced energy savings, expands output current, and increase
reliability during circuit board mounting and a greater degree of freedom during system design.
HVIC Technologies for IPM
JONISHI, Akihiro; AKAHANE, Masashi; YAMAJI, Masaharu
A high voltage integrated circuit (HVIC), which is a gate driver IC with a high breakdown voltage, is one of the
key devices required in enhancing the functionality of intelligent power modules (IPMs). Fuji Electric has developed
HVIC technology characterized by its advanced functionality, compactness, high reliability, and guaranteed industrial
use at 600 V/1,200 V for small- and medium-capacity IPM. By reducing the circuit area and adopting high breakdown
voltage technology and enhanced noise resistant level-shift circuit technology, we have reduced the chip size
by 20% while improving the breakdown voltage and reliability. In addition, we have achieved over-current and overheat
protection circuit technology for upper-arm IGBT, as well as level-down functionality for alarm signals.
3rd-Generation Direct Liquid Cooling Power Module for Automotive Applications
ARAI, Hirohisa; HIGUCHI, Keiichi; KOYAMA, Takahiro
Fuji Electric has developed a 3rd-generation direct liquid cooling power module for hybrid and electric vehicles.
The power module has a rated capacity of 750 V/800 A, which is designed for motor capacity of 100 kW. The market
for automotive application based power modules has been requiring increased efficiency and module miniaturization.
To meet these demands, we have improved exothermicity by adopting a water jacket for integrating the cooling fins
and cover while also increasing the reliability of the solder, thus enabling the module to achieve continuous operation
at 175 °C. Furthermore, we have miniaturized the power module by adopting an RC-IGBT that integrates IGBT and
Packaging Technology of 3rd-Generation Power Module for Automotive Applications
GOHARA, Hiromichi; TAMAI, Yuta; YAMADA, Takafumi
The development and popularization of hybrid and electric vehicles has been accelerating in recent years. These
new vehicles demand miniaturized, light-weight and higher-output power module in order to improve fuel efficiency.
Fuji Electric has developed high heat dissipating cooling unit for direct water-cooled structures, an ultrasonic bonding
technology for electrodes and copper terminal, and new long-life solder that applies both precipitation strengthening
and solid-solution strengthening. By applying these technologies, the 3rd-generation power modules for automotive
applications that utilize RC-IGBT dies achieve greater reliability, about 30% smaller footprint and thinner structure
compared to the previous generation.
RC-IGBT for Automotive Applications
YOSHIDA, Soichi; NOGUCHI, Seiji; MUKAI, Koji
The number of hybrid electric vehicles and electric vehicles in use on the road has been increasing as a measure
to reduce CO2 emissions in order to protect the environment from phenomena such as global warming. In order
to improve fuel efficiency for these types of vehicles, they need to reduce loss in mounted semiconductor devices,
while also decreasing the size of the inverter. To meet these needs, Fuji Electric has been working to develop an
RC-IGBT that integrates an IGBT and FWD into one chip. Moreover, we have optimized trench gate spacing, a field
stop layer and lifetime control for the RC-IGBT for automotive applications. As a result, the inverter achieves an
about 20% reduction in generated loss during the operation compared to using conventional RC-IGBTs for automotive
Relative Pressure Sensor for Automobile Fuel Tanks
KATO, Hirofumi; ASHINO, Kimihiro; SATO, Eisuke
In recent years, there has been increasing regulation to reduce the environmental burden of automobiles. One
example of such regulation is the requirement to detect fuel leaks in the United States. Fuji Electric has developed a
relative pressure sensor for automobile fuel tanks capable of being directly mounted to a pipe inside the engine room.
The sensor is used for controlling vaporized fuel exhaust suppression devices that recover vaporized fuel to incinerate
it in the cylinder. Based on our 6th-generation compact pressure sensor technology, we have successfully improved
resistance to vaporized fuel, enhanced protective functions and reinforced EMC to both ensure durability and
achieve high-precision detection.
PWM Power Supply Control IC “FA8B00 Series” Capable of Handling Peak Loads
MATSUMOTO, Shinji; YAMANE, Hiroki; YABUZAKI, Jun
In recent years, the notebook computer and inkjet printer market requires increasing the maximum output power
for new CPUs and motor drive loads. To meet these requirements, Fuji Electric has developed the “FA8B00 Series”
of pulse width modulation (PWM) power supply control IC capable of handling Peak loads. This IC can increase the
switching frequency up to 130 kHz in accordance with rise in FB terminal voltage, allowing it to increase the maximum
output power of a power supply without increasing the volume of a transformer. Furthermore, the IC comes
equipped with an expansion function for switching frequency jitter that enables it to achieve low EMI noise characteristics
even against varying loads.
2nd-Generation Low-Loss SJ-MOSFET “Super J MOS S2 Series”
WATANABE, Sota; SAKATA, Toshiaki; YAMASHITA, Chiho
In order to use energy efficiently, there has been increasing demand for enhanced efficiency in power conversion
equipment, and power metal-oxide-semiconductor field-effect transistors (MOSFETs) that are equipped with it have
been required to be compact, low loss and low noise. Fuji Electric has developed the easy-to-use 2nd-generation
low-loss SJ-MOSFET “Super J MOS S2 Series” that reduces on-resistance Ron·A, which is standardized by unit area,
and improves the trade-off characteristic between turn-off switching loss Eoff and the VDS surge at turn-off switching.
The adoption of this product is expected to improve the efficiency of power conversion equipment.
High-Speed Discrete IGBT “High-Speed W-Series”
HARA, Yukihito; NAITO, Tatsuya; KATO, Yoshiharu
Since power conversion efficiency is an important factor for uninterruptible power systems (UPSs) and power
conditioning sub-systems (PCSs) for photovoltaic power generation, switching devices used in the equipment are
required to reduce the power loss. For compact inverter welding machines, utilized devices are required to have lowloss
characteristics and high-speed switching to make conveyance easier. The high-speed discrete insulated-gate
bipolar transistor (IGBT) that we have developed and released reduces parasitic capacitance in active parts and optimizes
the field stop layer, thereby achieving a 10% reduction in loss for 650-V products and a 19% reduction in loss
for 1,200-V products when compared to the conventional product.