November 15, 2021
Fuji Electric Co., Ltd.
Launch of the 2nd-Generation Discrete SiC-SBD Series,
Contributing to Energy Saving for Data Centers and Communication Base Stations
*Schottky Barrier Diode
Power semiconductors undergo power loss (steady-state loss) when power is supplied. FE has developed and launched its 2nd-generation discrete SiC-SBD Series for power supply equipment of data centers and communication base stations, and it will contribute to energy saving by reducing steady-state loss in electronic circuits.
FE will contribute to the achievement of a decarbonized society by rolling out this series globally to achieve energy saving for equipment.* Estimated by FE based on IHS data
2nd-generation discrete SiC-SBDs
(From left: TO-220-2,TO-220F-2,and TO-247-2)
2. Product Features
Successfully lowered power loss by reducing substrate thickness to 1/3
* Products with the rated voltage of 650 V
3. Product Specifications
|Model No.||Rated voltage(V)||Rated current(A)||Forward voltage(V)||Surge forward current(A)||Package|
4. Product Inquiries