Fuji Electric has developed SiC MOSFETs and SiC SBDs that possess features, such as high withstand voltage, low resistance, and high-speed operation, which cannot be achieved when using Si.
Through the adoption of our unique trench structure, Fuji Electric has achieved the world’s highest level of low specific resistance (3.5 mΩcm2) with threshold voltage of 5 V while maintaining the high reliability of the “channels” used to turn current ON and OFF. Through this, we have successfully lowered specific resistance by over 50% compared with the previous planar structure.
Moreover, we have developed a dedicated SiC module with high current density using a unique pin-connected construction which fully leverages the merits of SiC devices. We have achieved All-SiC Modules using this device.