Research & Development
R&D Projects
High-power-density power unit equipped with SiC MOSFET
# Advanced Technology Laboratory # Industry Solutions # Semiconductors # Fundamental and cutting-edge technologies # Energy Saving
-
Combines advanced technologies, such as those for insulation, bonding, heating, cooling, power electronics, SiC power devices, and packaging
-
Achieves power density of 81kW/L
-
Efficiency of 99.5% at 37kW output
-
It utilizes forced air cooling with a rating of 37kW and achieves an output power density of 81kW/L with dimensions of W99 x D64 x H72 (㎜). It also makes use of our proprietary SiC MOSFET modules to reduce loss and adopts a main circuit structure for the multilayer printed circuit board that achieves miniaturization. The prototype unit has achieved an efficiency of 99.5% at rated output. In next step, we plan to apply these high power density technologies to a wide range of fields.

Unit: (㎜)

SiC :Developed product
IGBT :Our conventional product