SiC Devices

SiC devices have excellent characteristics that realize high blocking voltage, low power dissipation, high-frequency operation and high-temperature operation. Power semiconductors that make use of SiC achieve significant reduction in energy consumption, and can be used to develop smaller and lighter products.

Features

SiC-SBD Equipped IGBT Hybrid Module V Series

Utilize high performance chip

  • Low loss V Series IGBT
  • Low loss SiC-SBD

Package compatibility with conventional Si-IGBT module products

SiC Schottky-Barrier Diodes (SBD)

High speed switching

  • High frequency operation of power supplies, and miniaturization and weight reductions for systems

Low-VF

Low-IR

  • Tj=175°C guaranteed, high temperature operation of power supplies, low loss, high efficiency

High reverse surge withstand capability

Product List