It is predicted that the high information society will bring a sharp increase in the consumption of electrical energy. There is an earnest demand for improvement in power electronics for controlling electrical energy, more particularly in the efficiency of power semiconductor devices. Under the development strategy specialized in (1)intelligent motor control and (2)intelligent power management, Fuji Electric has pushed forward with developing intelligent products based on MOS gate device technology. This paper gives an outline of these technical achievements.

CRT display monitors have required a larger screen and higher resolution as personal computers and CAD made advances in performances and functions. To meet these requirements, efforts have been made towards larger beam current and higher horizontal deflection frequency. Under these technical trends, Fuji Electric greatly improved the transient forward characteristics of the former damper diode series and started selling damper diodes PG124S15 capable of driving a horizontal deflection circuit up to 120kHz. This paper introduces an outline of the damper.

In this multimedia society, the proportion of CRT monitors to electronic displays is still high because of their wide screens, high resolution, and low cost. Particularly in recent several years, market needs for large-size, high-resolution CRT monitors have increased every year. Under this market situation, Fuji Electric has developed high-speed, high-voltage diodes for widescreen, high-resolution monitors. Their merits are low loss in high-frequency, high-current rectification and large surgeproof capability. They can fully meet increases in the size and resolution of CRT monitors and will be widely used.

Fuji Electric has developed the SOP-8, low-voltage, low-RDS(on) (static drain-source on-state resistance), power MOSFET suitable for the battery charging and discharging and voltage regulation control of portable equipment expected more popular in future. The points of development are low-RDS(on) technology for chips and improvement in radiation characteristics and reliability for packages. This paper outlines the target of development, chip design, package design, lineup, ratings and characteristics of the SOP-8 power MOSFET.

The progress of automotive electronics is still more accelerated every year. Automobile manufacturers require reduction in the size and cost of systems increasing year by year. To protect the power device from load short-circuiting and surge voltage, automobile manufacturers used to add external protector parts, which was contrary to the above requirement. To solve the problem, Fuji Electric has developed intelligent power MOSFETs with the power device and self-protection circuit integrated on a chip. This paper mainly introduces the "advanced MOSFET" series from among these MOSFETs.

IGBTs are widely used in the industrial field, such as the power supply circuits of inverters, because of their large-current, high-voltage characteristics. Fuji Electric has so far commercialized module series, mainly targeting the large capacity field. Recently, aiming at the expansion of the small capacity field of 1kVA or less, the company has developed the series of discrete devices with molded TO package, G-series IGBTs, which is outlined in this paper.

In the power electronics field such as inverters, to meet market needs for small size, light weight high efficiency, and low noise, IGBTs (insulated-gate bipolar transistors) which are power devices characterized by low loss and fast switching have come into wide use. In pursuit of the total balance of high reliability, etc., in addition to the low loss performance of third generation IGBTs, Fuji Electric has developed series of new third generation IGBT modules (N-and G-series). This paper introduces the NPT (non-punch-through)-IGBT and high-voltage IGBT for traction use newly developed to expand the high-voltage and large capacity application of IGBT modules.

The newly developed R-series intelligent power module (IPM) adds a built-in protective function by directly detecting the IGBT chip temperature to the conventional function. This function can protect IGBT chips from thermal destruction due to a sharp temperature rise by motor locking application of the servo driver, etc., which was unprotected in the former IPM. Also, by integrating the internal IPM control circuit onto the IC, the number of parts is greatly reduced, resulting in size reduction, high reliability, and cost reduction.