This paper describes the present status and trends of MOS-gated power device technology which are contributing greatly to the development of power electronics systems. Concerning power MOSFETs, their basis performances are being improved and the new families such as logic-level devices and inverter-use devices are being developed. Concerning IGBTs, second-generation devices with performances highly improved have been developed and are being expanding their applications. Important devices to be developed in the not-too-distant future include third-generation IGBTs, intelligent devices, and large-capacity MOS-gated thyristers.

Power MOSFETs are widely used in switching supplies and the like.
Fuji Electric is popular in this field with its many types of products upgraded by on-state resistance reduction, high-speed switching, and other advanced technology. This paper introduces the new products and technical developments.

The application of power MOSFETs has spread in the fields of inverters and UPSs, which results in a demand for power MOSFETs with characteristics suitable for these fields.
Fuji Electric has recently developed a MOSFET fit for inverters and UPSs, and also module packages incorporating the power MOSFET. This paper introduces these products.

This article introduces the function of the semiconductor power device simulator FBIDES and its applications to IGBTs. The simulator was helpful in clarifying the failure mechanism of n-channel and p-channel IGBTs at a short circuit, leading to the expansion of the safe operating area and the prevention of failure at a gate off. It also gives a brief description of new-type IGBTs, such as Schottky barrier IGBTs abd lateral IGBTs.

Microwave ovens have rapidly spread with the change and diversification of diet. Under the circumstances, efforts have been made to reduce in size and weight, to allow free choice of supply frequencies, to make cooking software complete by continuously variable output, and to apply a high-frequency inverter with high-voltage supply.
This paper introduces Fuji Electric's new IGBT for microwave ovens. It has many superior features, such as low saturation voltage, high-speed switching, and a small and simplified drive circuit due to voltage drive.

Extended definition television (clear-vision) broadcasting and experimental high-definition television (high-vision broadcasting via satellite started; now the television picture industry is going to live in a high-definition, large-screen age.
This paper introduces Fuji Electric's new 1500-V IGBT for television horizontal deflection circuits. It has been developed as a device to support new-age television pictures, and is expected to come into wide use for high-resolution CRT display monitor deflection circuits as well as for television receivers.

Fuji Electric has developed second-generation high switching speed IGBT modules in a series. They reduce their loss by 30% as compared with the former type, and those in the 600-V class have average on-state voltage of 2.5-V and fall time of 0.25μs. Because this series has enough packaging types and capacities, we are convinced that it will meet various market needs such as inverters for driving motors, servo amplifiers, and uninterruptible power supplies.

Fuji Electric commercialized intelligent power modules of 8 types in all using bipolar transistors; recently, the company has developed an intelligent power module for inverter using an IGBT enabling high-speed switching. This module adopts second generation IGBT developed newly as a power element and adopts an exclusive IC that incorporates a drive function and a protective function.

IGBT modules have come into use in various power converters because of the advantages of their low saturation voltage and high-speed switching characteristics. To protect IGBTs surely from overvoltage and overcurrent, it is necessary to understand their characteristics and to give consideration to diode duty in practical equipment.
Taking a VVVF inverter as an example, this paper outlines the mechanism of overvoltage and overcurrent generation and a method of designing power dissipation and protective circuits.

Fuji Electric has developed a power hybrid IC making good use of the performance of MOS-gated power devices. It has superior features such as high-speed switching, low noise, high heat radiation, small size, and incorporation of a high-precision protective circuit; therefore, they are most suitable for switching supplies and motor-driving equipment. This paper describes the various hybrid technologies applied to the development to make the most of the performance of MOS-gated power devices.

This system operated by a stand-alone photovoltaic power generation system aims to convey necessary information to the general public with new-type media of character and picture display. It has recently been considered as the most efficient when all the conventional media get lost or work not enough at a disaster occurrence.
The system has just been launched by New Energy and Industrial Technology Development Organization (NEDO) with the joint cooperation of Shizuoka Prefecture, Chubu Electric Power Co., Inc. and Fuji Electric Co., Ltd., and has been in good operation at Shizuoka Training Center for Earthquake since April 1990.

Recent increase in LPG consumption has required improvement in its handling systems. This article introduces an outline of the LPG Terminal, and the system configuration, feature, fixed-quantity shipping method and component equipment of the shipping control system. This base particularly includes the following technical improvements: 1) A driver can operate the CRT keyboard for empty truck weighing as he is in his tank truck, 2) Weight being filled is displayed, 3) Optical-fiber cables are used between the computers and MMI (Man Machine Interface), and 4) Computers and controllers form a duplex system.