FUJI ELECTRIC JOURNAL Vol.60-No.10 (Oct/1987)
Recent Developments in Switching Power Transistors
This paper outlines recent technological trends in switching power transistors and Fuji Electric's new developments in this field. Rapid progress has been made in voltage-gate-driving-type devices such as power MOS FET and MBT (MOS-gate bipolar transistor). Also, Fuji Electric broke through technical limitation generally accepted in bipolar junction transistors (BJT) and has recently developed "Z-series" power transistor modules with excellent short-circuit withstand capability. The current applications of the BJT, power MOS FET and MBT are illustrated here in terms of current capacity, blocking voltage and operation frequency, followed by a brief description of the concept of "intelligent power switching devices."
Switching Transistors for Ringing-Choke-Type Convereters(RCC)
Jiro Terashima, Tadashi Miyasaka
Mainly the switching system has been adopted in DC stabilized power supplies according to recent social requirements toward energy saving and miniaturization. Among those switching power supplies, many small-capacity ones are of RCC type to make the cost low. Fuji Electric has recently put RCC-use transistors on the market, which have the follwing features:
(2) Ranking ofhFE
(3) High-speed switching characteristics
(4) Wide RBSOA
New High-speed 1,200V Bipolar Transistor Modules "Z-Series"
Shinichi Ito, Shinichi Kobayashi
Bipolar power transistor modules are widely used in VVVF and CVCF inverter circuits. The performance improvement and miniaturization of inverters require developing elements with high hFE high speed, wide RBSOA and high short-circuit withstand capability. This paper introduces an outline of the ratings and characteristics of the 1,200V power transistor modules "Z-series" developed to meet the above requirements and the element design techniques for them.
Power MOS FET
Shoichi Furuhata, Naoto Fujisawa, Takeyoshi Nishimura
As the market of the power MOS FET has rapidly spread in recent years, the optimal power MOS FET as it should be in various uses has come to be investigated. This paper describes the technological tendency of the power MOS FET, the series of the products and technical development in the product design.
MOS-Gate Bipolar Transistors (MBT)
Osamu Hashimoto, Katsunori Ueno, Takeyoshi Nishimura
Fuji Electric has developed the MOS-gate bipolar transistor (MBT, by our designation) usable at high voltage, high current and high frequency having both the merits of the power transistor and power MOS FET. This paper gives an outline of the structure, operation, design, ratings and characteristics of the MBT. The ratings of the MBT introduced here are 600V/21A, 600V/50A and 1,200V/25A, and the parameter dependency of electric characteristics refers mainly to the 1,200V/25A MBT.
Parallel-Drive Techniques of Bipolar Power Transistor Modules
Hiroto Suyama, Toru Hosen
Power transistors have come to be applied to large-capacity static converters, and many of them have to be used in parallel connection. This paper describes the cause of unequal currents carried by the elements in parallel connection and measures against them, and in addition, an outline of actual parallel circuits.
Base Drive Techniques of Bipolar Power Transistor Modules
Shinichi Kobayashi, Toru Hosen
The power transistor modules which have generally been used in inverter equipment simplify the circuits and enable high-speed switching in comparison with the thyristors; however,it is important to know the characteristics of the elements and to adopt the fittest base drive method in order to make the most of their merits. This paper describes the relation between the base drive condition and element characteristics, and then, the basic design method of base drive circuits and design precautions.
Protection Techniques of Bipolar Power Transistors
In order to protect power transistors from overvoltage or overcurrent, it is necessary to know device characteristics and high-voltage withstand capability and further to investigate what sort of duty is caused by what machanism in actual equipment. This paper, giving an actual example of a VVVF inverter, describes the generation mechanism of overvoltage and overcurrent, element characteristics related to it, high-voltage withstand capability, and the basic idea of protection.
Simulation of Power Devices
Osamu Hashimoto, Saburo Tagami
Device simulation technology has become indispensable to full knowledge of the principle of operation, optimal design and the shortening of development periods, of power device. This paper, giving an example of an MBT, introduces the approach to power device simulation.
Simultaneous batch solution in terms of electrons, holes and potential has been adopted for two dimensional analysis by extending the general Stone's method. It gives information on the internal state of elements, the principles of operation, current voltage characteristics, etc.
Reliability of Fuji Power Transistors
Kiichiro Shirai, Sachiko Sumi
This paper describes the reliability of Fuji power transistors, mainly on the following points:
The basic engineering, the outline of failure factors and typical failure modes, an example of failure analysis; the test items, purposes and test conditions for reliability evaluation, an example of the test results of the power transistor modules; an example of accelerated tests, such as accelerated humidity in pressure cooker tests for vapor pressure models and accelerated thermal fatigue at joints in intermittent load tests.
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