FUJI ELECTRIC JOURNAL Vol.83-No.6 (Nov/2010)

FUJI ELECTRIC JOURNAL Power Semiconductors


Power Semiconductors

Power Semiconductors: Present Status and Future Outlook
Toru Housen, Kuniaki Yanagisawa
With the growth of new energy sectors, such as wind power and mega solar, large-capacity modules are being developed and commercialized and Fuji Electric’s line-up of IGBT (insulated gate bipolar transistor) modules is rated up to 1,700 V/3,600 A. Wide bandgap semiconductors are being developed jointly with third-parties. High-speed discrete IGBTs for fast switching have been developed and are contributing to the realization of higher efficiency equipment. Power supply control ICs utilize a proprietary control method more energy efficient, smaller size and lower noise, and are contributing to the realization of higher performance equipment. Automotive devices such as IPS (intelligent power switch) and pressure sensors are being commercialized.
IGBT Module for Advanced NPC Circuits
Kousuke Komatsu, Takahito Harada, Haruo Nakazawa
A new IGBT module has been developed to realize advanced NPC (A-NPC: advanced neutral-point-clamped) inverters. The IGBT (insulated gate bipolar transistor) module used for A-NPC minimized power loss by using a 6th generation IGBT and FWD (free wheeling diode), as well as a 2nd generation RB-IGBT (reverse blocking IGBT). The internal inductance between each of the main terminals is less than 40 nH, and the terminal layout was optimized to reduce the A-NPC inverter size. This product can be applied to reduce the number of devices inside equipment, and can also contribute to the development of various types of power conversion equipment having lower power loss and higher power conversion efficiency.
750 V IGBT for Mild Hybrid Cars
Toshiyuki Matsui, Hitoshi Abe, Hiroaki Ichikawa
In mild hybrid cars, 600 V IGBT (insulated gate bipolar transistor) modules have often been used. Recently, however, in order to improve fuel efficiency and acceleration performance further, there has been growing demand for higher system voltages. In response to this demand, Fuji Electric has developed a 750 V IGBT and FWD (free wheeling diode) chip, and an IGBT module. A prototype of the module was evaluated and the following results were obtained. The module can be used safely with systems having power supply voltages of up to 500 V even when surge voltage is superimposed. When the 750 V IGBT is utilized, total loss can be decreased by approximately 28% compared to 1,200 V devices.
High Power IGBT Module with High Isolation Package for Three-Level Inverters
Takashi Nishimura, Takatoshi Kobayashi, Yoshitaka Nishimura
In recent years, power conversion equipment used in the field of new energy and the field of traction advance high efficiency by a multilevel inverter system. Fuji Electric has developed a new high-power IGBT (insulated gate bipolar transistor) module having high isolation voltages which could apply to three-level inverter as one of multi-level inverter systems. Newly developed high-power IGBT modules have rating of 600 to 3,600 A/1,700 V. They have three packages and product lineup for 1-in-1 and 2-in-1 modules.
Package Technology for New Structure 2-in-1 and 1-in-1 IGBT Modules
Yoshikazu Takamiya, Kazunaga Oonishi, Yoshihiro Kodaira
Among Fuji Electric’s industrial-use IGBT (insulated gate bipolar transistor) modules, the core product is the 2-in-1 module. It is intended to expand the share in the market for these modules, including customizing to meet various customer needs. Requests for higher performance inverter extend to improvements not only in power chips, but also in the packages for IGBT modules. 2-in-1 and 1-in-1 modules that incorporate the latest “V-Series” chips have been developed. In the development of this product, heat dissipation performance was improved by lowering the internal inductance, improving the accuracy of pin height and flatness, and optimizing the chip layout. Additionally, the package structure has been completely redesigned to realize improved thermal cycle characteristics.
PIM 6-in-1 IGBT Module Series Equipped with “V-Series” Chips
Yusuke Sekino, Tomoya Murai, Rikihiro Maruyama
ECONOPIMTM/PC-PACK series has been responded to market requests for smaller module size of IGBT (insulated gate bipolar transistor) by integrating multiple circuits into a single package. New“ V-series” was developed as a series aiming to achieve power range expansion and flexibility of customer design. By adopting insulated substrate which has high thermal conductivity and several types of pin layouts, larger current ratings than with a conventional package and flexible PCB (printed circuit board) design for our customers were established. Moreover, a new press-fit pin terminal has been developed for the solder-free assembling to the PCB, and enables to support various requirements.
Bidirectional Switching IGBT Modules for Matrix Converters
Yasuhiko Arita, Shinichi Yoshiwatari
The matrix converter method of AC-AC power conversion realizes an approximate 30% higher conversion efficiency than the PWM (pulse width modulation) conversion method. Moreover, equipment can be miniaturized and applications of this method are likely to increase in the future. For this method, bidirectional switching devices are essential, and Fuji Electric produces a bidirectional IGBT module that contains parallel-connected reverse-oriented IGBT chips. At present, the latest generation“ V-Series” IGBT chips are being used to develop a bidirectional IGBT module for matrix converters, which has larger capacity than prior modules, i.e. rated voltage and current of 1,200 V and 800A, respectively, and housed in a M258 package.
New High Power 2-in-1 IGBT Module
Takuya Yamamoto, Shinichi Yoshiwatari
Aiming for applications to new energy sectors, such as wind power and solar power generation, which are continuing to exhibit growth, Fuji Electric has developed the new High Power 2-in-1 IGBT (insulate gate bipolar transistor) module suitable for parallel connections. This product is equipped with a new 6th generation“ V Series” IGBT. Operation is guaranteed for semiconductor chip junction temperatures of up to 175 ºC, and the industry’s leading level of low on-voltage and low switching loss are achieved. Package technology such as ultrasonic welding and high reliability lead-free solder are utilized to ensure higher reliability than ever before.
“High Speed V-Series” of Fast Discrete IGBTs
Taketo Watashima, Ryu Araki
Fuji Electric has developed and commercialized the “High Speed V-Series” of discrete IGBTs (insulated gate bipolar transistors) rated at 600 V/35-75 A and 1,200 V/15-40 A for improving power conversion effi ciency and downsizing of mini UPSs (uninterruptible power supplies) and photovoltaic power conditioners. IGBT chips combining low on-voltage with high-speed switching characteristics and high-speed FWD chips are mounted in a small discrete package. In simulations of application to a UPS full-bridge circuit, lower loss by about 15% with the 600 V product and about 30% with the 1,200 V product was achieved in comparison with conventional series.
800 V Guaranteed HVIC Technology
Masaharu Yamaji, Masashi Akahane, Akihiro Jonishi
To help achieve energy savings in the power systems at IDC (internet data center), 800 V guaranteed HVIC (high voltage IC) technology has been established. A proprietary device process based on self-isolation was developed. To realize energy savings in a power system, the switching efficiency of the bridge circuit used in the power system must be improved. To achieve this improvement, component and circuit technology capable of reducing the I/O propagation delay of ICs to less than 100 ns was developed. Additionally, technology for guaranteeing the ability of a HVIC to withstand the essential high and negative voltage surges was also established.
“FA5590 Series” of 2nd Generation Critical Mode PFC Control ICs
Takato Sugawara, Makoto Owa, Shinichi Tezuka
To help reduce power consumption in power supplies, the“ FA5590 Series” of 2nd generation critical mode PFC (power factor correction) control IC has been developed. Standby power is reduced by using a fixed ON-time control system, and efficiency is improved by using function to limit the maximum oscillation frequency during light-load operation. Additionally, the method for detecting when the inductor current becomes zero has been changed to eliminate the need for an auxiliary winding of the inductor. Consequently, the power supply has fewer parts and cost can be reduced. Also, an enhanced protection function and improved accuracy enable these products to contribute to improved safety.
Latest Simulation Technologies for Power Supply ICs and Power Systems
Norihiro Komiyama, Jun Yabuzaki
In order to realize complex functions for power supply ICs and power systems, an IPC (intellectual property core) for studying the basic operations of a power supply IC at high-speed has been developed. Additionally, in order to accelerate the simulation of power systems, a highspeed circuit verification environment and an operation flow for envelope following analysis have been established. These technologies enable power systems to be studied and simulations to be performed faster in the early stages of circuit design. Requests for complex power supply ICs and power systems with advanced functionality and for shorter design lead times can be satisfied; and high design quality products can be developed.
“F5064H” IPS for Linear Control
Morio Iwamizu, Hideki Iwata, Motomitsu Iwamoto
A high-side IPS (Intelligent Power Switch) and an operational amplifier have been combined into a single package to develop the“ F5064H” used for linear controls. This product has been constructed with an internal high-precision operational amplifier which is needed for current detection, and contributes to the miniaturization of ECUs (Electronic Control Units) in automobiles. The output stage MOSFET (Metal-Oxide- Semiconductor Field-Effect Transistor) uses QPJ (Quasi Plane Junction) technology to achieve low on-resistance. Also, the smaller size of the IC circuit that utilizes 3rd generation 1.5 μm self-isolation process technology results in a smaller chip size that can be housed in a small SSOP-20 package.
6th Generation Small Pressure Sensor
Mutsuo Nishikawa, Kouji Matsushita, Kazunori Saitou
A pressure sensor is a critical device for improving the precision and efficiency of engine management in order to reduce the environmental impact of cars. Fuji Electric has developed a 6th generation small-size digital trimming-type pressure sensor. High precision diaphragm processing is implemented using an anisotropic etching technique and the area of the sensor unit is reduced. Additionally, the design rules were revised, and as a result, the sizes of the circuitry and protective devices were reduced. Accordingly, the chip area was reduced by 70% while maintaining the equivalent functions, precision and EMC protection as conventional 5th generation products.


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