FUJI ELECTRIC JOURNAL 1999 Vol.72-No.3

Present Status and Trends of Power Semiconductors
Hisao Shigekane
Power semiconductors are key components with unique application to actuator drive and energy conversion. Fuji Electric has carried out the research and development of power semiconductors aiming at the application of the latest semiconductor to mature rectifying elements, high performance by introducing fine machining technology, and intelligent and smart systems. As the result, various power semiconductors have been developed and marketed, including high-voltage diodes for microwave ovens, low VF SBDs (Schottky barrier diodes), trench gate MOSFETs (metal-oxide-semiconductor field-effect transistors), low-loss MOSFETs, IPSs (intelligent power switches) for ignitors, fourth-generation IGBT (insulated-gate bipolar transistor) modules, and IPMs (intelligent power modules).

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Intelligent Power Switches for Automotive Ignition
Shigeyuki Takeuchi, Motoi Kudo, Kazuhiko Yoshida
Fuji Electric has developed an IPS (intelligent power switch) with a self-isolated construction for automotive ignition. This is the first device in this field of the world that has a power device integrated on a chip. This paper describes undermentioned technologies necessary for igniter IPSs and the device performance utilizing them.
(1) CBR (collector ballasting resistor) technology to establish a high inductive load clamping capacity
(2) ZRN (Zener-resistor-network) technology to establish a high surge-proof capacity
(3) CRF (collector-gate resistive feedback) and HGD (high-frequency gate-decoupling) technologies to realize smart current limitation.

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SOP-8 Package High-Side Intelligent Power Switch
Shin Kiuchi, Takatoshi Ooe, Naoki Yaezawa
Electronic control equipment for automobiles is increases every year and car electric apparatus manufacturers desire reduction in size and cost as well as high performance. Recently, Fuji Electric has developed the SOP (small outline package)-8 high-side IPS (intelligent power switch) F5044H that has a reduction in package area by 50% compared with the former TO-220F-5 package in addition to improvement in basic performance. It has protective functions against overcurrent, overtemperature, and overvoltage as well as a diagnostic feedback function, incorporates a driver circuit as well as a dynamic clamping function for the surge voltage generated by turning off the inductive load, and further attains lower loss.

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Low Forward Voltage Schottky Barrier Diode
Tetsuhiro Morimoto, Toshiyuki Matsui, Yasushi Miyasaka
In recent portable apparatus that is typically represented by notebook computers, a demand for reduction in total power consumption to prolong battery life and reduce size an weight has caused a strong demand that semiconductor devices should be reduced in loss. To meet these market needs, Fuji Electric planned the optimum design of the barrier metal and wafer specifications to greatly reduce the forward voltage (VF). As the result, we have developed and marketed Schottky barrier diodes that attain VF of 0.36 V.

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Power MOSFET
Tadanori Yamada, Takashi Kobayashi
In recently, increasing concern for environmental problems, importance has been attached to reduction in energy and standby power in electrical and electronic products and to reduction in fuel consumption and exhaust gas in automobiles. To provide a measure against these environmental problems, Fuji Electric has developed a low-voltage, low on-state resistance power MOSFET (metal-oxide-semiconductor field-effect transistor) that can reduce losses in devices with different battery voltage. This paper outlines the design policy, product lineup, and features of this power MOSFET.

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Trench Gate MOSFET
Takeyoshi Nishimura, Takayuki Shimato, Yuichi Onozawa
Fuji Electric has developed a trench gate MOSFET that has reduced on-state resistance to 60% of the conventional planar-construction type and has a gate voltage guarantee of ±30 V. The reduction in on-state resistance was attained by reducing chip resistance including channel resistance components through fine crystallization and optimization of the processes such as fine trench etching conditions as well as by reducing package resistance. The gate guarantee was attained by preventing trench etching damages and sharp etching shapes through the optimization of etching and oxidation conditions and the development of a new process.

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High-Speed Switching Discrete IGBT
Kenichi Sawada
As computers have become popular, uninterruptible power supply (UPS) has used to ensure power supply. To meet the UPS market needs for small size, light weight, low noise, and high efficiency, the application of high frequency to UPS has been carried forward. This product is a high-speed, low-loss discrete IGBT (insulated-gate bipolar transistor) aiming at application to the power supply circuit of UPS. Its features and rating are (1) Rated voltage : 600 V, rated current : 30 A, 50 A, and 75 A (2) VCE(sat) 2.8 V, tf 250 ns (3) Small discrete package with a built-in high-speed forward chip.

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High-Voltage Diodes for Microwave Ovens
Takahiro Kuboyama, Taketo Watashima, Hiroaki Furihata
Recently, microwave ovens have had a trend toward increase in effective capacity rate (the rate of chamber capacity to the whole oven volume) and in high-frequency output. This has caused reduction in the space for power supply, and the high-voltage diodes used there more severely require low loss for high current. On the other hand, abnormal discharge by the magnetron that may happen requires ensuring high surge-proof capacity. Under these circumstances, Fuji Electric has marketed high-voltage diodes for microwave ovens for 9 kV and 12 kV based on newly designed high voltage and high surge-proof capacity chips.

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Fourth-Generation IGBT-PIMs
Souichi Okita, Norio Arikawa, Yasuyuki Hoshi
With the recent rapid development of power electronics, the IGBT (insulated-gate bipolar transistor) with the advantage of low loss and high-speed switching has developed repeating alteration of generations. Fuji Electric has developed and prepared a lineup for the 4th-generation IGBT-PIM (power integrated module) that has attained lower loss than former IGBTs and has pursued ease of use and high reliability. This paper give an outline of its contents.

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IGBT Modules for Converter Circuit Application
Fumio Nagaune, Takaoki Sasaki, Yasuyuki Kobayashi
IGBTs (insulated-gate bipolar transistors), power devices of low loss and high-speed switching, have wider been used for power converters such as inverters to attain small size and weight, high efficiency, and low noise. Fuji Electric developed IGBT modules specially for converter circuit application that have about 0.5 V lower FWD (free wheeling diode) voltage than conventional modules do. This paper describes the FWD chip design, lineup, ratings, and characteristics of the newly developed IGBT modules.

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Intelligent Power Modules for Low Power Drive
Tamao Kajiwara, Takaoki Sasaki, Susumu Toba
Fuji Electric has developed IPMs (intelligent power modules) for low power drive to meet market demands to power electronics application systems. The features are (1) multi-chip IPMs by developing specific monolithic ICs (integrated circuits), (2) overheat protection by directly detecting the temperature of IGBT (insulated-gate bipolar transistor) chip junctions, (3) application of the 4th-generation IGBT chips, (4) highly accurate overcurrent protection by shunt resistance detection and (5) low leakage current through the isolation layer by applying ceramic substrates.

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IGBT-IPM with a Built-in Current Sensor
Manabu Watanabe, Taku Sato, Yoshinori Oda
To miniaturize the load current sensor and reduce the number of wires for main circuit wiring in inverter systems, Fuji Electric has developed a new IGBT-IPM (insulated-gate bipolar transistor-intelligent power module) that incorporates a load current sensor and unites the inverter terminal strip. The features are (1) load current sensor : built-in shunt resistor of 1.1 to 3.3 m, (2) package : P613 and P614 with an inverter terminal strip united, (3) voltage/current : 600 V/75 to 200 A, 1,200 V/50 to 100 A and (4) protective functions : overcurrent, short-circuit, undervoltage, and chip overheat.

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