FUJI ELECTRIC JOURNAL 2002 Vol.75-No.10

Power Semiconductors

Trends of Power Semiconductor Devices
Hisao Shigekane, Yasukazu Seki, Tatsuhiko Fujihira
The recent trends of power semiconductor devices are discussed based on the conditions described at the International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2002. Technologies being closely watched include IGBT, super junction structure, and SiC technologies. Fuji Electric's U-series IGBTs and techniques applicable to IGBT development thus far are also described. Additionally, an overview is presented of the NPT-type devices that use FZ wafers and the FS-type devices that have enhanced characteristics. Moreover, Fuji Electric's devices for industrial, automotive and power supply-use, efforts to increase device intelligence, and technical innovations for individual devices are described.

Technological Innovation for Super-low-loss U-series IGBT Modules
Noriyuki Iwamuro, Tadashi Miyasaka, Yasukazu Seki
The super-low-loss U-series of 600V, 1,200V and 1,700V IGBT modules has been developed. Newly developed trench-gate and thin wafer technologies have resulted in a large decrease in the loss generated by IGBT chips. Through optimized anode construction and lifetime control, the FWD (free wheeling diode) chip has achieved lower reverse recovery current and lower loss. In regard to fabrication technology, the development of tin solder technology has dramatically increased power cycle endurance. Combining these technologies has enabled the production of modules having a 40% smaller footprint than previous models.

T-series and U-series IGBT Modules (600V)
Seiji Momota, Syuuji Miyashita, Hiroki Wakimoto
The T-series and U-series of IGBT modules have been developed for 600V applications. The T-series is highly resistant to damage and achieves low switching loss and low cost, enabled by the establishment of process technology for wafers having a thickness of the order of 100 m and the application of NPT technology to this 600V product. The U-series IGBT modules achieve the lowest loss in this class due to trench process technology that enables the steady-state loss to be minimized.

U-series IGBT Modules (1,200V)
Yuichi Onozawa, Shinichi Yoshiwatari, Masahito Otsuki
While demands have continued for the higher efficiency, smaller size, lower cost and lower noise of power converters, as typified by general-purpose inverters and uninterruptible power supplies, higher performance and lower cost are also being required of the power conversion elements used in inverter circuits. This paper introduces the 1,200V U-series IGBT modules, which achieve dramatically less loss than conventional devices due to the adoption of trench-gate and fieldstop structures.

U-series IGBT Modules (1,700V)
Yasuyuki Hoshi, Yasushi Miyasaka, Kentarou Muramatsu
1,700V U-series IGBTs and FWDs have been developed. The IGBTs have adopted a trench-gate structure on their surface, and a field-stop layer on their backside. As a result, the tradeoff relationship between VCE(sat) and Eoff is improved to 2.5V-35 mJ at 125 and 150A (current concentration 133 A/cm2). FWDs were designed with DW wafers and have adopted a structure that optimizes carrier injection from the surface. Further-more, soft recovery is realized by a novel lifetime control.

R-IPM3 and Econo IPM Series of Intelligent Power Modules
Manabu Watanabe, Yoshiyuki Kusunoki, Naotaka Matsuda
The marketplace is demanding lower loss and smaller size of the IPMs that are utilized in inverter and servo power converter units. In response to market needs, Fuji Electric has developed the R-IPM3 and Econo IPM. The R-IPM3 inherits the external shape and functions of the R-IPM and achieves low loss, and the Econo IPM achieves a small size and thin profile by combining concepts of the R-IPM and Econo modules. A line-up of 17 models of the R-IPM3 and 8 models of the Econo IPM having 600V, 20-150A capacity has been prepared.

Surge Protection IC for the Switch Interface of ECUs
Naoki Yaezawa, Takeshi Ichimura, Yujin Okamoto
Fuji Electric has developed a surge protection IC fitted in a SSOP, monolithically integrated with 14 channel input using an NMOS buffer circuit, level-shift circuit, and an input pull-up/pull-down resister for each channel input. This IC also integrates a surge absorption circuit having an ESD capability of more than 25 kV (under the condition of 150 pF-150 for each channel input), enabled by an integrated vertical power Zener diode rated at 60V. When used in the switch interface of an ECU (electronic control unit), this surge protection IC makes it possible to decrease the area required for mounting surge protection circuits on printed-circuit boards and also reduces the number of parts to be mounted, compared with conventional construction that uses discrete components.

Intelligent Power MOSFET for Automobiles
Hidetoshi Umemoto, Shoji Yamada, Hiroshi Tobisaka
The low-side, intelligent power MOSFET F5048 has been developed to support the smaller sizes and larger scales of electronic systems installed in automobiles. This intelligent power MOSFET was developed as a part of a series of smart power devices in which peripheral circuits is integrated into a power semiconductor. This device is suitable for applications having a load such as lamp or motor that requires a large current at the start of conduction. Features of this device include built-in overcurrent detection and overheat detection functions, high dynamic clamp voltage of 80V, switching time of 60 s typ., high electric discharge capability, and a surface mounted package.

M-Power2 Series of Multiple-chip Power Device for Power Supplies
Hiroyuki Ota, Noriho Terasawa
Switching power supplies are required to have low power dissipation and to be small size and lightweight. For this reason, Fuji Electric has developed a multi-oscillated current resonant converter and put the "M-Power 2 Series" on the market as application specific power device. The outstanding features are as follows.
(1) Standby input power is 0.5W or less, in conformance with Energy 2001
(2) 100W output when used in combination with a PFC (power factor correction) circuit and no heatsink
(3) Small dimensions of 30mm 10mm 3.5mm

High-voltage Schottky Barrier Diodes
Shoji Kitamura, Hiroshi Ito
150V and 250V Schottky barrier diodes (SBDs) have been developed as diodes suitable for the rectification circuit on the high-voltage secondary side of switching power supplies. Compared to the pn diodes used in the past, low forward-voltage (VF) and soft reverse reovery have been realized due to optimization of the barrier metal and epitaxial layer. It is believed that these SBDs will contribute to the development of switching power supplies having higher efficiency and smaller size.

SuperFAP-G Series of Power MOSFETs
Hiroyuki Tokunishi, Tadanori Yamada, Masanori Inoue
The SuperFAP-G Series of low-loss, ultra high-speed power MOSFETs has been developed in response to the trend toward lower consumption loss of IT equipment. Our SuperFAP-G Series is designed with newly developed QPJ (quasi-plane-junction) technology. Our new QPJ technology has almost reached to the "silicon unipolar limit" which enables to improve the FOM (figure-of-merit=Ron Qgd) approximataly 2.5 times to that of conventional one. This paper introduces the 100V-250V medium-voltage SuperFAP-G Series that was developed using this technology. The results of a typical application of the SuperFAP-G Series are also described.

Back

Page Top