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News Release
Expansion of Product Line of SiC Hybrid Modules and Start of Sample Shipments

June 29,2015
Fuji Electric Co., Ltd.

　Tokyo, June 29, 2015 - Fuji Electric Co., Ltd. (TSE:6504) (“FE”), headquartered in Tokyo, Japan, led by President Michihiro Kitazawa, is pleased to announce that it has expanded the product line of power semiconductor hybrid modules with Silicon Carbide (SiC) integrated as a next-generation power semiconductor device, and has started to ship samples.

1．Background

　The hybrid module is composed of SiC Schottky barrier diodes (SBDs) as well as Si insulated-gate bipolar transistors (IGBTs). Compared with Silicon (Si) devices, SiC devices can easily be made to withstand higher voltage, and feature lower switching dissipation when SiC is applied as the power semiconductor. There are high expectations for SiC hybrid modules as key components in industrial equipment miniaturization and energy conservation. The global market for SiC devices is expected to grow at an average annual rate of approximately 35%*1 during the next five years.

*1

: Source: FE estimated from IHS 2014; forecast of average annual growth rate during five years from 2014

2．Features

(1) Reduces power dissipation, contributing to energy conservation

SiC hybrid module (1700 V)

　Compared with conventional Si modules, SiC hybrid modules can achieve a significant reduction of power dissipation, thereby contributing to energy conservation for industrial equipment. In the example usage of our conventional general purpose inverter*2, the total power dissipation of power modules has been reduced by approximately 30%.

*2

Released on November 26, 2014 "Release of Large Capacity Inverters Using SiC Hybrid Modules"

(2) Improved capacity and high-frequency operation reduce equipment footprints

　The output has been successfully increased to up to 1.5 times that of conventional Si modules of the same ratings (in the example of 1700 V products). In the example usage of our conventional general purpose inverter*2, the output power capacity can be increased from 315 to 450 kW without changing the equipment size, which makes it possible to reduce the number of units installed.
Further, high-frequency operation of up to double that of conventional modules with the same dissipation (highest value in the example of 1700 V products) makes it possible to downsize peripheral AC filters. These features contribute to reducing equipment footprints.

(3) Wide product lineup suits a variety of equipment

　The enhanced lineup of SiC hybrid modules to begin sample shipments encompasses small to large current capacities in 600 V, 1200 V, and 1700 V products, contributing to substantial energy conservation and miniaturization of industrial equipment such as general purpose inverters, servos, uninterruptible power systems (UPSs), and power conditioners.

3．Product specifications and shipping schedule

Rated voltage Rated current Circuit configuration Package size
(mm)		 Shipping schedule
600 V 50 A/75 A/100 A PIM※3 62 X 122 Released
1200 V 35/50 A
100 A 6-pack To start in June 2015
300 A 2-pack 62 X 108 To start in January 2016
1400 A 89 X 250
1700 V 400 A 80 X 110 Released
1000 A/1400 A 89 X 250 To start in January 2016
1200 A 140 X 130

*3

: PIM (power integrated module): a circuit integrating a three-phase rectifier bridge, braking, and three-phase inverter circuits in one package.

4．Sales Target

3 billion yen in FY2018

5．Product Inquiries

Japan: Sales Department 1, Semiconductor Division, Sales Group, Fuji Electric Co., Ltd., Japan
Telephone: +81-3-5435-7152
United States of America: Semiconductor Department, Fuji Electric Corp. of America, U.S.A
Telephone: +1-732-560-9410
Europe: Power Semiconductor Division, Fuji Electric Europe GmbH, Germany
Telephone: +49(0)69-66 90 29 0
China: Semiconductor Sales Department, Semiconductor Sales Headquarters, Fuji Electric China Co., Ltd, P.R.C
Telephone: +86-21-5496-1177
Asia: Semiconductor Sales Division, Fuji Electric Asia Pacific. Pte. Ltd., Singapore
Telephone: +65- 6533-0014