News Release
Release of New High-Power 2-in-1 IGBT Module Series Designed for Parallel Connections

December 28,2010
Fuji Electric Holdings Co., Ltd.

Fuji Electric Holdings Co., Ltd., announces that its core operating company, Fuji Electric Systems Co., Ltd., will release the New High-Power 2-in-1 IGBT Module series of high-capacity, low-power-loss Insulated Gate Bipolar Transistor (IGBT) modules designed for parallel connections. Sales will commence from January 2011.

In line with the spread of power generation from natural energy sources such as solar and wind, such power generation facilities are continuing to expand in scale. Accordingly, demand is growing for high-capacity power semiconductors used in these power conversion systems.

The models in the New High-Power 2-in-1 IGBT Module series are suitable for higher power capacity in comparison with conventional 2-in-1 IGBT modules, as they have been designed to realize low inductance and current balance of parallel-connected semiconductors to optimize parallel connections.

1. Features

New High-Power 2-in-1 IGBT Module Series

2. Outline of specifications

3. Primary applications

The series is designed for use at electrical power conversion facilities such as wind turbine and solar power systems, as well as in high-voltage inverters and high-capacity inverters.

4. Sales release

January 2011

Customer inquiries

Power Module Department
Semiconductor Division
Semiconductor Group
Fuji Electric Systems Co., Ltd.
Telephone: 81-263-26-2513